| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element including an indium-based compound semiconductor thin film with superior electron mobility owing to significant surface flatness improvement, and also to provide a semiconductor device including the semiconductor element. <P>SOLUTION: This semiconductor element is provided with: the indium-based compound semiconductor thin film formed on a substrate 1 made of a gallium arsenide. The surface of the gallium arsenide inclines in a (0-1-1) direction to a gallium arsenide (100) surface or a surface crystallographically equivalent to the gallium arsenide (100) surface, or in a direction crystallographically equivalent to the gallium arsenide (100) surface at angles of 0.2° or more and 2.4° or below. The indium compound semiconductor thin film includes a lamination structure of a p-type indium compound semiconductor thin film 3 and an n-type indium compound semiconductor thin film 2. The semiconductor element is applicable to various kinds of optical devices. <P>COPYRIGHT: (C)2010,JPO&INPIT |
