发明名称 |
FILM FORMATION SUBSTRATE, FILM FORMING METHOD, AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To form a film of mixed layer on a film-formed substrate at a uniform concentration. SOLUTION: This film formation substrate includes a first substrate on the first surface of which a light absorbing layer, a material layer including two types of host and guest materials different in sublimation temperature, and a material capping layer having a higher sublimation temperature than the material layer, and a second substrate the first surface of which is opposed to the first surface of the first substrate, and on the first surface of which the film of mixed layer having two types of host and guest materials mixed is formed by emitting light from the second surface opposite to the first surface of the first substrate to sublimate the material layer. This film forming method and this method of manufacturing a light emitting device utilizing the same are also provided. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010218895(A) |
申请公布日期 |
2010.09.30 |
申请号 |
JP20090064500 |
申请日期 |
2009.03.17 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
AOYAMA TOMOYA;TAKAHASHI REINA |
分类号 |
H05B33/02;C23C14/04;C23C14/24;H01L51/50;H05B33/10;H05B33/26 |
主分类号 |
H05B33/02 |
代理机构 |
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地址 |
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