| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a variable-resistance type nonvolatile memory device having a novel structure which allows high-density information recording. <P>SOLUTION: The nonvolatile memory device includes a memory layer whose resistance is changed by at least one of an electric field applied thereto and a current passing therethrough, a plurality of first electrodes provided on a first main surface of the memory layer, a plurality of probe electrodes provided facing the plurality of first electrodes and having a variable relative positional relationship with the first electrodes, and a drive unit connected to the plurality of probe electrodes and configured to record information into the memory layer by causing at least one of an electric field having a component parallel to the first main surface and a current flowing in a direction having a component parallel to the first main surface, between at least two of the plurality of first electrodes via the plurality of probe electrodes. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
