发明名称 |
REDUCING SILICIDE RESISTANCE IN SILICON/GERMANIUM-CONTAINING DRAIN/SOURCE REGIONS OF TRANSISTORS |
摘要 |
In sophisticated P-channel transistors, a high germanium concentration may be used in a silicon/germanium alloy, wherein an additional semiconductor cap layer may provide enhanced process conditions during the formation of a metal silicide. For example, a silicon layer may be formed on the silicon/germanium alloy, possibly including a further strain-inducing atomic species other than germanium, in order to provide a high strain component while also providing superior conditions during the silicidation process.
|
申请公布号 |
US2010244107(A1) |
申请公布日期 |
2010.09.30 |
申请号 |
US20100749619 |
申请日期 |
2010.03.30 |
申请人 |
KRONHOLZ STEPHAN;PAPAGEORGIOU VASSILIOS;WIATR MACIEJ |
发明人 |
KRONHOLZ STEPHAN;PAPAGEORGIOU VASSILIOS;WIATR MACIEJ |
分类号 |
H01L29/417;H01L21/336;H01L29/78 |
主分类号 |
H01L29/417 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|