发明名称 SOL-GEL PRECURSOR LIQUID AND OXIDE DIELECTRIC FILM OBTAINED BY USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a sol-gel precursor liquid in which a sol-gel precursor liquid film is formed by one application is thick and is also formed of desired oxide dielectric film thickness with the smallest number of repetitive application times as much as possible. <P>SOLUTION: Sol-gel precursor liquid is for forming a film consisting of oxide ceramic having a perovskite structure. Liquid includes: a first component system agent (solution comprising barium and/or strontium, which constitute a site A in the perovskite structure); and a second component system agent (solution containing a material obtained by partially hydrolyzing titanium alkoxide and adjusting a polymerization degree as a supply source of titanium constituting a site B of the perovskite structure). <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010219148(A) 申请公布日期 2010.09.30
申请号 JP20090061639 申请日期 2009.03.13
申请人 MITSUI MINING & SMELTING CO LTD 发明人 SUZUKI HISAO;ABE NAOHIKO;ICHIYANAGI AKIRA
分类号 H01L21/316;C04B35/46;C04B35/468;H01G4/33;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L41/18;H01L41/318;H01L41/39 主分类号 H01L21/316
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