PLASMA ETCHING METHOD

摘要

A method for processing a substrate to form a desired pattern by an etching process after forming a mask pattern over the substrate includes the steps of forming two layers over the substrate; measuring a width of the mask pattern or an etched pattern of one of the two layers; and adjusting a flow rate of any one of HBr and other gases, used in the etching process, based on the measured width. The two layers may include a silicon nitride layer and an organic dielectric layer.