发明名称 CHEMICAL VAPOR DEPOSITION METHOD
摘要 A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
申请公布号 WO2010111313(A1) 申请公布日期 2010.09.30
申请号 WO2010US28377 申请日期 2010.03.24
申请人 TOKYO ELECTRON LIMITED;AIR PROCUTS AND CHEMICALS, INC.;LEE, ERIC, M.;VRTIS, RAYMOND, NICHOLAS;O'NEILL, MARK, LEONARD;HURLEY, PATRICK, TIMOTHY;FAGUET, JACQUES;MATSUMOTO, TAKASHI;AKIYAMA, OSAYUKI 发明人 LEE, ERIC, M.;VRTIS, RAYMOND, NICHOLAS;O'NEILL, MARK, LEONARD;HURLEY, PATRICK, TIMOTHY;FAGUET, JACQUES;MATSUMOTO, TAKASHI;AKIYAMA, OSAYUKI
分类号 H01L21/363;C23C16/00 主分类号 H01L21/363
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