| 摘要 |
PURPOSE: A seed forming method and a metal filling method for a nano porous aluminum oxide film for electronic components using the same are provided to bottom-up fill metal uniformly and densely in nano holes formed on a nano porous aluminum oxide film. CONSTITUTION: A seed forming method comprises a step of sensitizing a nano porous aluminum oxide film(10a) having nano holes using tin chloride 6~10g/L and hydrochloric acid 10ml/L, and a step of activating the nano porous aluminum oxide film using palladium chloride 0.1~1 g/L, hydrochloric acid 10ml/L, and EDTA(ethylenediamine 4-acetate) 1~10g/L in order to form seeds(1) in the nano holes.
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