发明名称 |
LOGIC CIRCUIT CAPABLE OF LEVEL SHIFTING |
摘要 |
PURPOSE: A logic circuit for performing a level shifting operation is provided to perform the level shifting operation in a logic gate block with respect to a power voltage by including p-type metal oxide semiconductor transistors and inverters connected with the logic gate block. CONSTITUTION: A logic gate block(320) outputs a first signal by receiving an input signal. The logic gate block includes a complementary metal oxide semiconductor logic gate inverters(321, 322). Inverters(310, 330) output a second signal by receiving the first signal. A switching circuit transmits the power voltage of the logic gate block with either of a first power voltage(VDDP) or a second power voltage(VDDC) in response with the first signal and the second signal. The voltage levels of the first power voltage and the second power voltage are different.
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申请公布号 |
KR20100104124(A) |
申请公布日期 |
2010.09.29 |
申请号 |
KR20090022315 |
申请日期 |
2009.03.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, JONG HOON;SIM, SOUNG HOON;AHN, MI YEON |
分类号 |
H03K19/0185;H03K19/00 |
主分类号 |
H03K19/0185 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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