发明名称 LOGIC CIRCUIT CAPABLE OF LEVEL SHIFTING
摘要 PURPOSE: A logic circuit for performing a level shifting operation is provided to perform the level shifting operation in a logic gate block with respect to a power voltage by including p-type metal oxide semiconductor transistors and inverters connected with the logic gate block. CONSTITUTION: A logic gate block(320) outputs a first signal by receiving an input signal. The logic gate block includes a complementary metal oxide semiconductor logic gate inverters(321, 322). Inverters(310, 330) output a second signal by receiving the first signal. A switching circuit transmits the power voltage of the logic gate block with either of a first power voltage(VDDP) or a second power voltage(VDDC) in response with the first signal and the second signal. The voltage levels of the first power voltage and the second power voltage are different.
申请公布号 KR20100104124(A) 申请公布日期 2010.09.29
申请号 KR20090022315 申请日期 2009.03.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, JONG HOON;SIM, SOUNG HOON;AHN, MI YEON
分类号 H03K19/0185;H03K19/00 主分类号 H03K19/0185
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