发明名称 Method of manufacturing image sensor
摘要 A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.
申请公布号 US7803653(B2) 申请公布日期 2010.09.28
申请号 US20070834818 申请日期 2007.08.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOO GIL-SANG;PARK BYUNG-JUN;LEE YUN-KI
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址