发明名称 |
Semiconductor device, manufacturing method of semiconductor device, display device, and manufacturing method of display device |
摘要 |
A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
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申请公布号 |
US7804088(B2) |
申请公布日期 |
2010.09.28 |
申请号 |
US20090418991 |
申请日期 |
2009.04.06 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
TANAKA ATSUSHI;UMEDA KEN-ICHI;HIGASHI KOHEI;NANGU MAKI |
分类号 |
H01L33/00;G02F1/1368;H01L21/336;H01L29/786 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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