发明名称 Semiconductor device, manufacturing method of semiconductor device, display device, and manufacturing method of display device
摘要 A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
申请公布号 US7804088(B2) 申请公布日期 2010.09.28
申请号 US20090418991 申请日期 2009.04.06
申请人 FUJIFILM CORPORATION 发明人 TANAKA ATSUSHI;UMEDA KEN-ICHI;HIGASHI KOHEI;NANGU MAKI
分类号 H01L33/00;G02F1/1368;H01L21/336;H01L29/786 主分类号 H01L33/00
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