发明名称 Insulator for high current ion implanters
摘要 An insulator usable in high current ion implantation systems includes increased surface due to the configuration of an inner cylinder and an outer cylinder coupled to the inner cylinder at one end. A cylindrical cavity extends between the two cylinders increasing the surface area and making the insulator resistant to being coated by a coating that could produce a leakage path.
申请公布号 US7804076(B2) 申请公布日期 2010.09.28
申请号 US20060382600 申请日期 2006.05.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 HUANG JAMES;KUO YUNG-CHENG;HSU MIN-KUNG
分类号 H01J37/317 主分类号 H01J37/317
代理机构 代理人
主权项
地址