STACKED SEMICONDUCTOR DEVICE HAVING PATTTERNS FOR INSURING CONTACT MARGIN

摘要

PURPOSE: A stacked type semiconductor device is provided to improve the electrical property of a triple stacked type SRAM semiconductor device by preventing the physical short-circuit and a single bit. CONSTITUTION: A plurality of unit layers(118, 138, 158) have a transistor where gates and source/drain regions are included and an interlayer insulating layer which covers the transistor. A metal wiring is formed on the gates of the unit layer which is arranged in the outermost part among unit layers. A capping pattern(168) is arranged on the metal wiring and has a width which is greater than the metal wiring. The capping pattern is made of an insulating material which has an etching selectivity to the interlayer insulating layer of the unit layers.