DIELECTRIC FILMS COMPRISING SILICON AND METHODS FOR MAKING SAME

摘要

PURPOSE: A dielectric film including silicon and a method for manufacturing the same are provided to obtain the low wet-etching rate and the superior uniformity in a semiconductor wafer by including silicon oxide, silicon oxynitride, silicon oxycarbide, and the mixture of the same. CONSTITUTION: One or more surface of a substrate are prepared in a reaction chamber. One or more silicon precursor which is selected from silicon-contained precursors are prepared. Oxygen source is prepared. The molecular amount ratio of the oxygen source with respect to the silicon precursor is less than 1:1. A dielectric film is formed on the surface of the substrate through a deposition process which is selected from either of a chemical vapor deposition process or an atomic layer deposition process.