发明名称 METHOD FOR MANUFACTURING LC CIRCUIT FORMING MIM CAPACITOR UNDER METAL INTERCONNECTOR-TYPE INDUCTOR WITH WIDE OR SAME WIDTH THAN THE CAPACITOR
摘要 PURPOSE: A method for manufacturing an LC circuit forming an MIM capacitor on the lower side of an inductor with a metal wiring shape is provided to minimize the loss of inductance by forming an inductor on one plane with an octagonal spiral. CONSTITUTION: A first conductive pattern(130) is formed on an insulation layer and becomes a bottom electrode of a capacitor. A dielectric layer pattern(140) to accumulate charges is formed on the first conductive pattern. A second conductive pattern(150) is formed on the dielectric layer pattern and becomes a top electrode of the capacitor.
申请公布号 KR20100102446(A) 申请公布日期 2010.09.24
申请号 KR20090020831 申请日期 2009.03.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM, JIN SUNG;CHUNG, CHUL HO
分类号 H01L27/04 主分类号 H01L27/04
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