发明名称 |
METHOD FOR MANUFACTURING LC CIRCUIT FORMING MIM CAPACITOR UNDER METAL INTERCONNECTOR-TYPE INDUCTOR WITH WIDE OR SAME WIDTH THAN THE CAPACITOR |
摘要 |
PURPOSE: A method for manufacturing an LC circuit forming an MIM capacitor on the lower side of an inductor with a metal wiring shape is provided to minimize the loss of inductance by forming an inductor on one plane with an octagonal spiral. CONSTITUTION: A first conductive pattern(130) is formed on an insulation layer and becomes a bottom electrode of a capacitor. A dielectric layer pattern(140) to accumulate charges is formed on the first conductive pattern. A second conductive pattern(150) is formed on the dielectric layer pattern and becomes a top electrode of the capacitor. |
申请公布号 |
KR20100102446(A) |
申请公布日期 |
2010.09.24 |
申请号 |
KR20090020831 |
申请日期 |
2009.03.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM, JIN SUNG;CHUNG, CHUL HO |
分类号 |
H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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