INTEGRATED CIRCUIT DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF STORING DATA AND CODE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an integrated circuit device having a nonvolatile memory capable of electrically writing and erasing data; and a method of storing data and codes.

SOLUTION: This integrated circuit device includes: a first memory array for storing data for first data usage in accordance with a first operation algorithm; and a second memory array on a semiconductor substrate for storing data for second data usage in accordance with a second operation algorithm; wherein a charge accumulation nonvolatile memory cell in the first memory array and the second memory array includes a plurality of flash memory cells each having a nitride charge trapping structure and having structures nearly-identical to one another, the first operation algorithm includes writing by hole injection and erasing by electric field-assisted electron injection, and the second operation algorithm includes writing by electron injection and erasing by hole injection.

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