| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device suitable for miniaturization, while deterioration in characteristics and a damage to an upper electrode due to hydrogen in a ferroelectric capacitor, are suppressed. Ž<P>SOLUTION: The semiconductor memory device is provided with a first plug PLG1, a second plug PLG2, a ferroelectric capacitor FC, a hydrogen barrier film HB, a second interlayer film ILD 3, a local wiring LIC, and a through plug PPLG. The first plug PLG1 penetrates through a first interlayer film ILD 1 to be connected to one of a source and drain of a transistor. The second plug PLG2 penetrates through the first interlayer film to be connected to the other one of the source and the drain of the transistor. The ferroelectric capacitor FC contains a lower electrode LE arranged above the first plug and electrically connected to the first plug, a ferroelectric film FE, and an upper electrode UE. The hydrogen barrier film HB covers the ferroelectric capacitor. The second interlayer film ILD 3 is arranged on the hydrogen barrier film. The local wiring LIC is arranged on the second interlayer film and the hydrogen barrier film, and penetrates through the hydrogen barrier film to be connected to an upper electrode. The penetration plug PPLG penetrates through the local wiring, the second interlayer film, and the hydrogen barrier film so as to be connected to the second plug. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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