| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a film containing SnO, inexpensively obtaining a high-performance p-type oxide semiconductor film, and eliminating the necessity of separately forming an n-type semiconductor and a p-type semiconductor, to thereby reduce manufacturing costs in manufacturing a complementary element using the oxide semiconductor. SOLUTION: This manufacturing method includes: a first step of forming a film containing SnO, a second step of forming an insulating film made of oxide or nitride on the film containing SnO, and a third step of heat treating a laminated film including the film containing SnO and the insulating film. COPYRIGHT: (C)2010,JPO&INPIT |
