发明名称 |
PROCEDE DE DETOURAGE PROGRESSIF |
摘要 |
<p>The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.</p> |
申请公布号 |
FR2935536(B1) |
申请公布日期 |
2010.09.24 |
申请号 |
FR20080055875 |
申请日期 |
2008.09.02 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
BROEKAART MARCEL;MIGETTE MARION;MOLINARI SEBASTIEN;NEYRET ERIC |
分类号 |
H01L21/302;H01L21/77;H01L21/98 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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