COMPOSITION AND PROCESS FOR IMMERSION LITHOGRAPHY

摘要

PROBLEM TO BE SOLVED: To provide a new photoresist composition useful for immersion lithography.

SOLUTION: A preferred photoresist composition comprises one or more materials that can be substantially non-mixable with a resin component of the resist. A further preferred photoresist composition comprises: (1) Si substitution; (2) fluorine substitution; (3) hyperbranched polymers; and/or (4) polymeric particles. Particularly a preferred photoresist can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

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