| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a junction form between semiconductor thin films and different types of substrates, capable of obtaining stable bonding characteristics utilizing intermolecular force between the semiconductor thin films and metal. <P>SOLUTION: A metal oxide layer 103 is provided on the surface of a metal layer 102 provided on a substrate 101. By having semiconductor thin films 304-308 made to abut against the metal layer 102 to form a region 410 including an oxide of a metal element among them, the semiconductor thin films 304-308 is bonded to the metal layer 102. <P>COPYRIGHT: (C)2010,JPO&INPIT |
