Thin active layer i.e. solar cell layer, defining method for fabrication of e.g. microelectromechanical devices, involves performing hydrogen ionic or atomic implantation process by rear face of substrate

摘要

The method involves performing hydrogen ionic or atomic implantation process by rear face (14) of a substrate (4) to form an implantation zone, which defines a thin active layer (8) to be separated, where the rear face of the substrate provides energy higher than 1MeV. The substrate is assembled with a support after performing ionic or atomic implantation process, where thickness (E) of the substrate before implantation process is greater than 100 or 150 micrometer. The substrate is made of germanium, gallium arsenide or silicon.