| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a connection portion having a structure which hardly receives damage to wiring during processing of a contact hole and suppresses a decrease in reliability. Ž<P>SOLUTION: The connection portion 1 has a first conductive layer 2 and a second conductive layer 4 connected through a contact hole 5 formed at their intersection. The contact hole 5 in a rectangular shape is arranged almost in the width-directional center of the second conductive layer 4. Then a rectangular semiconductor layer 3 is provided surrounding a pattern of the contact hole 5. The semiconductor layer 3 is formed on the first conductive layer 2 at a bottom part of the contact hole 5. The semiconductor layer 3 has a high etching selection ratio with respect to the first conductive layer 2 and sufficiently high etching efficiency for the first conductive layer 2. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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