| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of ensuring a sufficient drain current by snap-back to a surge voltage after a breakdown, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device 100 has an N-deep-Well region 101 as a lightly-doped N-type semiconductor having a first plane 111 and a second plane 112, an N-type heavily-doped source region 103 formed on the first plane 111 side, a drain region 105 formed at an interval from the source region 103 on the first plane 111 side, a P-type well region 102 including a region on the second plane side from the source region 103 and formed to surround the source region 103, and a moderately-doped offset drain region 104 including a region on the second plane side from the drain region 105 and formed to surround the drain region. On the side opposed to the P-type well region 102 of the offset drain region 104, there is formed a P-region 106. COPYRIGHT: (C)2010,JPO&INPIT |
