A semiconductor component resistant to the formation of a parasitic bipolar transistor and a method for manufacturing the semiconductor component using a reduced number of masking steps. A semiconductor material of N-type conductivity having a region of P-type conductivity is provided. A doped region of N-type conductivity is formed in the region of P-type conductivity. Trenches are formed in a semiconductor material and extend through the regions of N-type and P-type conductivities. A field oxide is formed from the semiconductor material such that portions of the trenches extend under the field oxide. The field oxide serves as an implant mask in the formation of source regions. Body contact regions are formed from the semiconductor material and an electrical conductor is formed in contact with the source and body regions. An electrical conductor is formed in contact with the backside of the semiconductor material.
申请公布号
US2010237409(A1)
申请公布日期
2010.09.23
申请号
US20100790987
申请日期
2010.06.01
申请人
VENKATRAMAN PRASAD;GRIVNA GORDON M;ROBB FRANCINE Y;CHANG GEORGE;CASTEEL CARROLL
发明人
VENKATRAMAN PRASAD;GRIVNA GORDON M.;ROBB FRANCINE Y.;CHANG GEORGE;CASTEEL CARROLL