发明名称 THERMAL INTERFACE MATERIAL WITH SUPPORT STRUCTURE
摘要 Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip (15, 115) and a heat spreader (30) is provided. The method includes placing a thermal interface material layer (35, 35 ', 35 ", 35 " ', 35 " ") containing a support structure (40, 40') on the first semiconductor chip (15, 115). The heat spreader (30) is positioned proximate the thermal interface material layer (35, 35 ', 35 ", 35 " ', 35 " "). The thermal interface material layer (35, 35 ', 35 ", 35 " ', 35 "") is reflowed to establish thermal contact with both the first semiconductor chip (15, 115) and the heat spreader (30).
申请公布号 WO2010107542(A1) 申请公布日期 2010.09.23
申请号 WO2010US24589 申请日期 2010.02.18
申请人 ADVANCED MICRO DEVICES, INC.;ATI TECHNOLOGIES ULC;TOUZELBAEV, MAXAT;BLACK, BRYAN;YANG, YIZHANG;REFAI-AHMED, GAMAL 发明人 TOUZELBAEV, MAXAT;BLACK, BRYAN;YANG, YIZHANG;REFAI-AHMED, GAMAL
分类号 H01L23/42 主分类号 H01L23/42
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