Heat sink for cooling insulated gate bipolar transistor of e.g. converter, has heat dissipation devices formed from material e.g. copper, with heat conductance value that is higher than heat conductance value of material of base

摘要

The heat sink (2) has a fin base (4) comprising multiple heat dissipation devices (10). Multiple cooling fins (6) are parallely arranged at a distance from each other. The heat dissipation devices are formed from a material e.g. copper, with heat conductance value that is higher than heat conductance value of the material of the fin base. The heat dissipation devices are formed with square, rectangular, trapezoidal or circular cross section, where the heat sink is formed from aluminum or extruded aluminum sheath.