发明名称 |
Slurry composition for a chemical mechanical polishing process and method of manufacturing a semiconductor device using the slurry composition |
摘要 |
A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive, about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a chemical structure of a triblock copolymer including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block and a remainder of water.
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申请公布号 |
US7799687(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20070907105 |
申请日期 |
2007.10.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEONG CHOONG-KEE;CHUNG DAE-HYUK;HAN MYANG-SIK |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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