发明名称 FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要 PURPOSE: A fuse of a semiconductor device and a method for forming the same are provided to prevent the formation of a fuse in blowing the fuse by forming a metal fuse having high tension. CONSTITUTION: A first interlayer insulating film(10) is comprised of a material forming a tension force. The fuse of the semiconductor device comprises a fuse metal(30) which is formed on the first interlayer insulating film and has the tension force higher than first interlayer insulating film. The fuse metal also includes a second interlayer insulating film.
申请公布号 KR20100101415(A) 申请公布日期 2010.09.17
申请号 KR20090019891 申请日期 2009.03.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JANG, CHI HWAN
分类号 H01L23/62 主分类号 H01L23/62
代理机构 代理人
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