| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can be driven by a lower voltage. Ž<P>SOLUTION: A p-side contact layer 18 has an uneven structure 30 including concave parts 31 and convex parts 32 on a surface on the side of a p-side electrode 21 and has an increased surface area. The p-side electrode 21 is brought into contact with the p-side contact layer 18 on an upper surface, a side surface and a bottom surface of the uneven structure 30 and has an increased contact area with the p-side contact layer 18, thereby providing lower voltage driving. Furthermore, the p-side contact layer 18 has a laminated structure of a first p-side contact layer 18A and a second p-side contact layer 18B with different materials or compositions. Between the first p-side contact layer 18A and the second p-side contact layer 18B, a carrier accumulation layer is formed, in which holes are accumulated, by piezoelectric field effects due to a distortion difference between them. In this carrier accumulation layer, ideal ohmic contact is achieved without a Schottky barrier between the p-side electrode 21 and the p-side contact layer 18. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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