| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has low ON resistance and whose OFF-time leakage current is suppressed. SOLUTION: The semiconductor device includes a semiconductor base 10 of a first conductivity type having a first principal surface where an uneven structure is formed, a hetero semiconductor layer 20 having a different band gap from the semiconductor base 10 and arranged forming a heterojunction on the first principal surface 101 of the semiconductor base 10, a gate insulating film 30 arranged on the first principal surface 101 of the semiconductor base 10 adjacently to the region where the hetero semiconductor layer 20 is arranged, a gate electrode 40 arranged on the gate insulating film 30, a source electrode 50 arranged on the hetero semiconductor layer 20, and a drain electrode 60 arranged on a second principal surface 102 of the semiconductor base 10, wherein a current driving portion is formed along the uneven structure and the height of an energy barrier for many carriers in the semiconductor base 10 at an interface of the heterojunction is set to higher than an upper end of a projection portion on a recessed portion bottom surface of the uneven structure. COPYRIGHT: (C)2010,JPO&INPIT |
