FLASH CELL WITH INTEGRATED HIGH-K DIELECTRIC AND METAL-BASED CONTROL GATE
摘要
<p>A semiconductor device is described having an integrated high-k dielectric layer and metal control gate. A method of fabricating the same is described. Embodiments of the semiconductor device include a high-k dielectric layer disposed on a floating gate. The high-k dielectric layer defines a recess. A metal control gate is formed in the recess.</p>
