| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of cracks in an interlayer insulating film even if tensile stress is generated by a barrier metal, and to prevent the occurrence of peeling between the interlayer insulating film and a film which is formed on the interlayer insulating film. SOLUTION: A semiconductor device has: a semiconductor substrate 1; interlayer insulating films 2 and 3 which are formed on the semiconductor substrate 1; an electrode pad 4 which is formed on the interlayer insulating films 2 and 3; a protective film 6 which is formed on the interlayer insulating films 2 and 3 so that it may the cover peripheral part of the electrode pad 4 and has first a opening 5 through which the central part of the electrode pads 4 is exposed; a partition member 7 which is formed on the exposed part of the electrode pad 4 through the first opening 5 and divides the first opening 5 into several second openings 5d; the barrier metal 8 which is formed on the protective film 6 so that it may fill the second openings 5d; and bump electrodes which are formed on the barrier metal 8. The partition member is interposed between the electrode pad and the barrier metal. COPYRIGHT: (C)2010,JPO&INPIT |
