| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that yield is deteriorated owing to warpage generated on a semiconductor substrate (semiconductor chip) caused by the difference in stress between the semiconductor substrate and a thick metal layer when a semiconductor chip is further thinned in a semiconductor device of a flip-chip mounting structure equipped with the thick metal layer for reducing resistance formed on the rear surface of the semiconductor substrate. <P>SOLUTION: The semiconductor device has a structure in which a recess is provided on a semiconductor substrate of a second main surface overlapping on at least an operation region of the semiconductor substrate 10 (semiconductor chip) in which an operation region is provided on a first main surface Sf1 and a metal layer is provided on a second main surface Sf2. In this way, the semiconductor chip has a first thickness in the surrounding portion and a second thickness thinned than the first thickness in the recess. As described above, since the surrounding portion has the first thickness, even if a thick metal layer is formed on the second main surface, the warpage of the semiconductor chip can be prevented. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
