| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a rear surface treatment method capable of carrying out a rear surface treatment on a semiconductor substrate while avoiding giving mechanical damage to the semiconductor substrate of a semiconductor device. Ž<P>SOLUTION: The rear surface treatment method is carried out by: preparing the semiconductor device in which an integrated circuit having a plurality of electrodes is provided on the front surface of the semiconductor substrate; electrically connecting the plurality of electrodes to an anode; and electropolishing the rear surface of the semiconductor substrate by performing anodic oxidation with an electrolytic solution placed in contact with the rear surface of the semiconductor substrate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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