发明名称 MONOLITISCHE BYPASS-DIODE UND SOLARZELLENBAND-ZUSAMMENBAU
摘要 An apparatus and method for making a solar cell with an integrated bypass diode. The method comprises the steps of depositing a second layer having a first type of dopant on a first layer having an opposite type of dopant to the first type of dopant to form a solar cell, depositing a third layer having the first type of dopant on the second layer, depositing a fourth layer having the opposite type of dopant on the third layer, the third layer and fourth layer forming a bypass diode, selectively etching the third layer and the fourth layer to expose the second layer and the third layer, and applying contacts to the fourth layer, third layer, and the first layer to allow electrical connections to the assembly. The apparatus comprises a first layer having a first type of dopant, a second layer having a second type of dopant opposite to the first type of dopant, wherein the first layer and the second layer form a solar cell, a third layer, coupled to the second layer, and a fourth layer, coupled to the third layer, the third layer and the fourth layer forming a bypass diode.
申请公布号 DE60044775(D1) 申请公布日期 2010.09.16
申请号 DE2000644775 申请日期 2000.03.20
申请人 HUGHES ELECTRONICS CORP. 发明人 BOUTROS, KARIM S.;KRUT, DMITRI D.;KARAM, NASSER H.
分类号 H01L27/142;H01L31/042;H01L31/04;H01L31/05;H01L31/18 主分类号 H01L27/142
代理机构 代理人
主权项
地址