发明名称 ELECTRICAL ANTI-FUSE AND RELATED APPLICATIONS
摘要 A first terminal and a second terminal of a FinFET transistor are used as two terminals of an anti-fuse. To program the anti-fuse, a gate of the FinFET transistor is controlled, and a voltage having a predetermined amplitude and a predetermined duration is applied to the first terminal to cause the first terminal to be electrically shorted to the second terminal.
申请公布号 US2010232203(A1) 申请公布日期 2010.09.16
申请号 US20100724556 申请日期 2010.03.16
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHUNG TAO-WEN;KE PO-YAO;CHUNG SHINE;HSUEH FU-LUNG
分类号 G11C17/00;H01H85/00 主分类号 G11C17/00
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