GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, METHOD OF FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, AND EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a gallium nitride-based semiconductor optical device that includes an In-containing gallium nitride-based semiconductor layer that exhibits low piezoelectric effect and high crystal quality.

SOLUTION: The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle AOFFlies in the range of 0.05° or more to less than 15°. The angle AOFFis equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane SMand m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers 19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from the normal axis ANof the primary surface 13a. The indium content of the well layers 19 is larger than 0.1.

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