发明名称 |
THREE-DIMENSIONAL GAN EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.
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申请公布号 |
US2010229788(A1) |
申请公布日期 |
2010.09.16 |
申请号 |
US20090568291 |
申请日期 |
2009.09.28 |
申请人 |
NATIONAL SUN YAT-SEN UNIVERSITY |
发明人 |
LO I-KAI;HSIEH CHIA-HO;HSU YU-CHI;PANG WEN-YUAN;CHOU MING-CHI |
分类号 |
C30B25/02;H01L21/205 |
主分类号 |
C30B25/02 |
代理机构 |
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