发明名称 LOW-FREQUENCY FILTER COMPRISING MAXWELL-WAGNER STACK
摘要 <p>The present invention relates to an electric low-pass filter, comprising a layer stack formed by a first electrode layer, a first dielectric layer adjacent to the first electrode layer, a second dielectric layer adjacent to the first dielectric layer, and a second electrode layer adjacent to the second dielectric layer. The first dielectric layer is made of a material and has a layer thickness, which in combination allow a tunellingof first charge carriers of a first charge-carrier polarity from the first electrode layer through the first dielectric layer to an interface between the first and second dielectric layers, under application of a first tunneling voltage of a first voltage polarity between the first and second electrode layers, and a tunneling of second charge carriers of an opposite second charge-carrier polarity from the first electrode layer through the first delectric layer to the interface between the first and second dielectric layers under application of a second tunneling voltage of a second voltage polarity between the first and second electrodes, which second voltage polarity is oppsosite to the first voltage polarity. The second charge carriers have a second charge-carrier mobility in the first dielectric material, which is lower than the first charge-carrier mobility of the first charge carriers.</p>
申请公布号 WO2010103452(A1) 申请公布日期 2010.09.16
申请号 WO2010IB50985 申请日期 2010.03.08
申请人 NXP B.V.;KOCHUPURACKAL, JINESH BALAKRISHNA PILLAI;BESLING, WILLEM FREDERIK ADRIANUS 发明人 KOCHUPURACKAL, JINESH BALAKRISHNA PILLAI;BESLING, WILLEM FREDERIK ADRIANUS
分类号 H03H5/00 主分类号 H03H5/00
代理机构 代理人
主权项
地址