Magnetoresistive element, magnetic random access memory and method of manufacturing the same

摘要

A magnetoresistive element includes: a lower magnetic layer; a barrier layer; and an upper magnetic layer. The barrier layer is provided on the lower magnetic layer. The upper magnetic layer is provided on the barrier layer. One of magnetization directions of the lower magnetic layer and the upper magnetic layer is fixed. The barrier layer has a first surface which includes a surface contacted with an upper surface of the lower magnetic layer. The upper magnetic layer has a second surface which includes a surface contacted with an upper surface of the barrier layer. Each of the first surface and the second surface is larger than the upper surface of the lower magnetic layer in area.