发明名称 |
INTEGRATED CIRCUIT, 1T-1C EMBEDDED MEMORY CELL CONTAINING SAME, AND METHOD OF MANUFACTURING 1T-1C MEMORY CELL FOR EMBEDDED MEMORY APPLICATION |
摘要 |
An integrated circuit includes a semiconducting substrate (110), electrically conductive layers (120) over the semiconducting substrate, and a capacitor (130) at least partially embedded within the semiconducting substrate such that the capacitor is entirely underneath the electrically conductive layers. A storage node voltage is on an outside layer (132) of the capacitor. In the same or another embodiment, the integrated circuit may act as a 1T-1C embedded memory cell including the semiconducting substrate, an electrically insulating stack (160) over the semiconducting substrate, a transistor (140) including a source/drain region (142) within the semiconducting substrate and a gate region (141) above the semiconducting substrate, a trench (111) extending through the electrically insulating layers and into the semiconducting substrate, a first electrically insulating layer (131) located within the trench, and the capacitor located within the trench interior to the first electrically insulating layer. |
申请公布号 |
WO2010074948(A3) |
申请公布日期 |
2010.09.16 |
申请号 |
WO2009US67066 |
申请日期 |
2009.12.08 |
申请人 |
INTEL CORPORATION;DOYLE, BRIAN S.;SOMASEKHAR, DINESH;DEWEY, GILBERT;SURI, SATYARTH |
发明人 |
DOYLE, BRIAN S.;SOMASEKHAR, DINESH;DEWEY, GILBERT;SURI, SATYARTH |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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