| 发明名称 |
METHOD FOR FORMING Cu FILM, AND STORAGE MEDIUM |
| 摘要 |
<p>A wafer having a CVD-Ru film formed on the surface thereof is provided. The surface of the wafer to be used as a substrate is cleaned. A film-forming raw material comprising a Cu complex is supplied to the cleaned wafer to form a Cu film on the wafer.</p> |
| 申请公布号 |
WO2010103879(A1) |
申请公布日期 |
2010.09.16 |
| 申请号 |
WO2010JP51585 |
申请日期 |
2010.02.04 |
| 申请人 |
TOKYO ELECTRON LIMITED;HIWA KENJI;KOJIMA YASUHIKO |
发明人 |
HIWA KENJI;KOJIMA YASUHIKO |
| 分类号 |
H01L21/285;C23C16/18;H01L21/3205;H01L23/52 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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