发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A substrate processing apparatus and a method for manufacturing the same are provided to shield heat radiated toward an O-ring from a heater by installing a gas introduction unit on a line for connecting the heater and the O-ring. CONSTITUTION: A processing chamber(203) is installed in a processing container(201). A susceptor(217) is installed in the processing container. A through hole(217a) is installed in the susceptor. A heating unit(217h) for heating a substrate is installed in the susceptor. A gas introduction unit(203a) is installed to the upper side of the processing container. A gas supplying pipe(234) supplies processing gas into the processing container.
申请公布号 KR20100100650(A) 申请公布日期 2010.09.15
申请号 KR20100019066 申请日期 2010.03.03
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 HARADA KOICHIRO
分类号 H01L21/205;H01L21/02;H01L21/3065 主分类号 H01L21/205
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