发明名称 |
SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A substrate processing apparatus and a method for manufacturing the same are provided to shield heat radiated toward an O-ring from a heater by installing a gas introduction unit on a line for connecting the heater and the O-ring. CONSTITUTION: A processing chamber(203) is installed in a processing container(201). A susceptor(217) is installed in the processing container. A through hole(217a) is installed in the susceptor. A heating unit(217h) for heating a substrate is installed in the susceptor. A gas introduction unit(203a) is installed to the upper side of the processing container. A gas supplying pipe(234) supplies processing gas into the processing container.
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申请公布号 |
KR20100100650(A) |
申请公布日期 |
2010.09.15 |
申请号 |
KR20100019066 |
申请日期 |
2010.03.03 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
HARADA KOICHIRO |
分类号 |
H01L21/205;H01L21/02;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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