PURPOSE: A light emitting element is provided to prevent the internal quantum efficiency from being reduced due to crystalline defects by including a carrier trapping part in at least one layer of a multiple quantum well structure. CONSTITUTION: A buffer layer(13) is formed on a substrate(11). A first semiconductor layer(15) is formed on the buffer layer. A second semiconductor layer(19) is formed on the first semiconductor layer. A multiple quantum well structure(17) including a well layer(17b) and a barrier layer(17a) is interposed between the first semiconductor layer and the second semiconductor layer. At least one carrier trapping part is formed in at least one layer of the multiple quantum well structure.
申请公布号
KR20100100567(A)
申请公布日期
2010.09.15
申请号
KR20090089040
申请日期
2009.09.21
申请人
LEE, CHUNG HOON;KAL, DAE SUNG;KIM, DAE WON;NAM, KI BUM
发明人
LEE, CHUNG HOON;KIM, DAE WON;KAL, DAE SUNG;NAM, KI BUM