发明名称 |
Self-aligned cross-point memory fabrication |
摘要 |
Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections.
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申请公布号 |
US7795132(B2) |
申请公布日期 |
2010.09.14 |
申请号 |
US20080182905 |
申请日期 |
2008.07.30 |
申请人 |
MOLECULAR IMPRINTS, INC. |
发明人 |
SREENIVASAN SIDLGATA V.;MELLIAR-SMITH CHRISTOPHER MARK;LABRAKE DWAYNE L. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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