| 摘要 |
A diode assembly comprising first and second diodes each having a different breakdown voltage, each of the first and second diodes comprising a semiconductor substrate; an electrically conducting channel layer on the semiconductor substrate; an upper semiconductor layer on the channel layer, the upper semiconductor layer comprising a recess; first and second ohmic contacts on the upper semiconductor layer on opposite sides of the recess, the ohmic contacts being connected together to form a first diode contact; a gate electrode within the recess, the gate electrode forming a second diode contact; characterised in that the area of the recess of the first diode covered by the first gate electrode is different to the area of the recess of the second diode covered by the second gate electrode.
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