发明名称 Method of fabricating a semiconductor light-emitting device
摘要 A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.
申请公布号 US7795059(B2) 申请公布日期 2010.09.14
申请号 US20080098309 申请日期 2008.04.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAITO SHINJI;NUNOUE SHINYA
分类号 H01L21/00;H01L33/20;H01L33/38;H01L33/44 主分类号 H01L21/00
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