| 摘要 |
A semiconductor memory device has a first interlayer insulating film formed on a semiconductor substrate and having a capacitor opening portion provided in the film, and a capacitance element formed over the bottom and sides of the capacitor opening portion and composed of a lower electrode, a capacitance insulating film, and an upper electrode. A bit-line contact plug is formed through the first interlayer insulating film. At least parts of respective upper edges of the lower electrode, the capacitance insulating film, and the upper electrode at a side facing the bit-line contact plug are located below the surface of the first interlayer insulating film, the lower electrode, the capacitance insulating film, and the upper electrode being located over the sides of the capacitor opening portion. The upper electrode is formed over only the bottom and sides of the capacitor opening portion.
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