发明名称 |
Doping wide band gap semiconductors |
摘要 |
A 13C diamond is doped by proton induced transmutation. P-type doping is achieved by the 13C(p,αγ)10B reaction. N-type doping is achieved by the 13C(p,γ)14N reaction. The transmutation reaction that occurs is determined by selection of proton beam energy. Stacks of junctions each calculated to be in the order of 10 nm thick have been achieved.
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申请公布号 |
US7795120(B1) |
申请公布日期 |
2010.09.14 |
申请号 |
US20090560622 |
申请日期 |
2009.09.16 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
PRICE JACK L.;GUARDALA NOEL A.;PRAVICA MICHAEL G. |
分类号 |
H01L21/261 |
主分类号 |
H01L21/261 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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